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Three dimensional semiconductor storage device having write drivers under a three dimensional memory cell array

机译:在三维存储单元阵列下具有写驱动器的三维半导体存储设备

摘要

According to one embodiment, a semiconductor storage device includes a three-dimensional memory cell array, write drivers, and a program voltage control circuit. In the three-dimensional memory cell array, memory cells are three-dimensionally arranged. The write drivers are arranged to be distributed under the three-dimensional memory cell array and apply a program voltage to the memory cells during writing in the memory cells. The program voltage control circuit is arranged around the three-dimensional memory cell array and performs control for making the write drivers to generate the program voltage.
机译:根据一个实施例,一种半导体存储装置包括三维存储单元阵列,写驱动器和编程电压控制电路。在三维存储单元阵列中,存储单元是三维布置的。写驱动器被布置为分布在三维存储单元阵列下方,并且在向存储单元写入期间向存储单元施加编程电压。编程电压控制电路布置在三维存储单元阵列周围,并执行控制以使写驱动器产生编程电压。

著录项

  • 公开/公告号US8493800B2

    专利类型

  • 公开/公告日2013-07-23

    原文格式PDF

  • 申请/专利权人 YURI TERADA;TAKAHIKO SASAKI;

    申请/专利号US201113021208

  • 发明设计人 TAKAHIKO SASAKI;YURI TERADA;

    申请日2011-02-04

  • 分类号G11C7/00;

  • 国家 US

  • 入库时间 2022-08-21 16:45:36

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