Method and a structure for enhancing electrical insulation and dynamic performance of MIS structures comprising vertical field plates

摘要

In an MIS structure a field plate electrode is incorporated below a buried gate electrode by using an insulating oxide layer, which is formed concurrently with the gate dielectric layer. In order to obtain superior dynamic behavior and enhanced dielectric strength the oxidation behavior of the field plate electrode is modified, for instance by incorporating a desired high concentration of arsenic.