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Semiconductor device and method of forming directional RF coupler with IPD for additional RF signal processing
Semiconductor device and method of forming directional RF coupler with IPD for additional RF signal processing
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机译:半导体器件和形成具有用于附加RF信号处理的IPD的定向RF耦合器的方法
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摘要
A semiconductor device has a substrate and RF coupler formed over the substrate. The RF coupler has a first conductive trace with a first end coupled to a first terminal of the semiconductor device, and a second conductive trace with a first end coupled to a second terminal of the semiconductor device. The first conductive trace is placed in proximity to a first portion of the second conductive trace. An integrated passive device is formed over the substrate. A second portion of the second conductive trace operates as a circuit component of the integrated passive device. The integrated passive device can be a balun or low-pass filter. The RF coupler also has a first capacitor coupled to the first terminal of the semiconductor device, and second capacitor coupled to a third terminal of the semiconductor device for higher directivity. The second conductive trace is wound to exhibit an inductive property.
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