Method of analyzing iron concentration of boron-doped P-type silicon wafer and method of manufacturing silicon wafer

摘要

An aspect of the present invention relates to a method of analyzing an iron concentration of a boron-doped p-type silicon wafer by a SPV method, which comprises subjecting the wafer to Fe—B pair separation processing by irradiation with light and determining the iron concentration based on a change in a minority carrier diffusion length following the separation processing. The iron concentration is calculated with a calculation equation comprising a minority carrier diffusion length L_AF1 measured after the separation processing, a minority carrier diffusion length L_AF2 measured after a prescribed time has elapsed following measurement of L_AF1, and dependence on time of recombination of Fe—B pairs separated by the separation processing. The calculation equation is derived by assuming that the irradiation with light causes boron atoms and oxygen atoms in the wafer to form a bonded product, and by assuming that the bonded product has identical influences on L_AF1 and L_AF2.