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Exposure mask with double patterning technology and method for fabricating semiconductor device using the same
Exposure mask with double patterning technology and method for fabricating semiconductor device using the same
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机译:具有双重图案化技术的曝光掩模及其制造半导体器件的方法
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摘要
An exposure mask for forming a G-type active region with a double patterning technology includes a bar shaped first light-blocking pattern to define an I-type active region, and an island shaped second light-blocking pattern to define a bit line contact region. The first light-blocking pattern and the second light-blocking pattern are arranged alternately.
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