Radiation tolerant complementary cascode switch using non-radiation hardened transistors

摘要

A power switching circuit designed for operating in a radiation environment using non-radiation hardened components is provided. The power switching circuit provides a high-voltage rated, non-radiation hardened N-channel FET (N-FET) controlled by a relatively small, low-voltage, non-radiation hardened P-channel FET (P-FET), while both devices are operating in a radiation environment. The P-FET device is drive by a sufficiently high drive voltage in order to overcome gate threshold shifts resulting from accumulated radiation damage.