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Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
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机译:磁性隧道结(MTJ)可以减少自旋转移磁化开关电流
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摘要
A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to 1×106 A/cm2 is disclosed. The MTJ has a Co60Fe20B20/MgO/Co60Fe20B20 configuration where the CoFeB AP1 pinned and free layers are amorphous and the crystalline MgO tunnel barrier is formed by a ROX or NOX process. The capping layer preferably is a Hf/Ru composite where the lower Hf layer serves as an excellent oxygen getter material to reduce the magnetic “dead layer” at the free layer/capping layer interface and thereby increase dR/R, and lower He and Jc. The annealing temperature is lowered to about 280° C. to give a smoother CoFeB/MgO interface and a smaller offset field than with a 350° C. annealing. In a second embodiment, the AP1 layer has a CoFeB/CoFe configuration wherein the lower CoFeB layer is amorphous and the upper CoFe layer is crystalline to further improve dR/R and lower RA to ≦10 ohm/μm2.
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机译:公开了一种MTJ,该MTJ将Spin-RAM中的自旋转移磁化开关电流(Jc)最小化为<1×10 6 Sup> A / cm 2 Sup>。 MTJ具有Co 60 Sub> Fe 20 Sub> B 20 Sub> / MgO / Co 60 Sub> Fe 20 Sub> B 20 Sub>构型,其中CoFeB AP1固定层和自由层为非晶态,结晶MgO隧道势垒通过ROX或NOX工艺形成。覆盖层优选地是Hf / Ru复合物,其中较低的Hf层用作优良的吸氧剂材料,以减少自由层/覆盖层界面处的磁性“死层”,从而增加dR / R,并降低He和Jc 。退火温度降低到约280℃,以得到比350℃退火更光滑的CoFeB / MgO界面和更小的偏移场。在第二实施例中,AP1层具有CoFeB / CoFe构造,其中下部CoFeB层是非晶的,而上部CoFe层是晶体的以进一步改善dR / R并且将下部RA降低至≤10ohm/μm 2 Sup >。
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