Method of implementing memristor-based multilevel memory using reference resistor array

摘要

The present invention relates to a memristor, and more particularly, to a method of implementing a memristor-based multilevel memory using a reference resistor array and a write-in circuit and a read-out/restoration circuit for the memristor-based multilevel memory, in which a memristor can be used as a multilevel memory. In the present invention, a reference resistance value is written in a selected memristor of a memristor array by applying repeatedly the current pulses of which widths are proportional to the difference between the resistances of the selected memristor and the selected node of the reference resistor array.