METHOD FOR MANUFACTURING CROSS POINT TYPE RESISTOR MEMORY ARRAY AND METHOD FOR LOADING BODY OF CROSS POINT TYPE RESISTOR MEMORY ARRAY

摘要

PROBLEM TO BE SOLVED: To obtain a cross point type resistor memory array in which resistor memories are completely insulated from each other and self-aligned.;SOLUTION: The manufacturing method for the memory array includes a process 34 for forming a first p⁺-layer and a first n⁺-buried layer on a first silicon substrate; a process 40 for depositing a first lower electrode, a sacrificial material layer, and a first hard mask; a process 48 for patterning the first hard mask as a first pattern, etching the first hard mask, a sacrificial material layer and the first lower electrode, and then overetching the first n⁺-buried layer; a process 50 for depositing a first insulating layer; a process 56 for patterning the first hard mask as a second pattern, etching the first hard mask, the first insulating layer, the sacrificial material layer, the first lower electrode, and the first n⁺-buried layer, and overetching the first silicon substrate; a process for depositing a second insulating layer 58; a process for etching the remaining first hard mask and the sacrificial material layer; a process for depositing a first resistor material layer; and a process for depositing and etching a first upper electrode.;COPYRIGHT: (C)2007,JPO&INPIT