DIRECT LASER WRITING METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTALS WITH INORGANIC MATERIAL SUBSTRATES

摘要

The invention relates to a method for producing photonic crystals during which an inorganic photoresist is firstly provided that exhibits a phase change when irradiated with an energy greater than the electronic band gap of the photoresist. By irradiating the photoresist with a laser beam whose energy is less than the electronic band gap of the photoresist, whose intensity at the focal point, however, is high enough that non-linear effects occur there, a phase change nevertheless occurs in the photoresist. Afterwards, the irradiated photoresist is subjected to the action of an etching solution that preferably dissolves a phase of the photoresist and lastly, the developed photoresist is removed therefrom in the form of a photonic crystal. Inorganic photonic crystals produced according to the inventive method are suited for use in fully optical systems, circuits and components for optical telecommunications or computer systems.