SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE AND LASER-PROCESSING APPARATUS COMPRISING SAME

摘要

Disclosed is a semiconductor light-emitting device having superior light-extracting efficiency in a lateral direction and enabling a substrate to be easily cut, a method for manufacturing the semiconductor light-emitting device, and a semiconductor light-emitting device package and a laser-processing apparatus comprising the semiconductor light-emitting device. The semiconductor light-emitting device comprises: a sapphire substrate; and a nitride structure consisting of a plurality of nitride epitaxial layers which are stacked on the upper surface of the sapphire substrate and which comprise an active layer for generating light. Each horizontal cross-section of the substrate and the nitride structure has a diamond shape having two acute angles and two obtuse angles. One or more reforming areas having a horizontal-band shape are formed on at least one surface of the substrate.