HIGH-EFFICIENCY SILICON-COMPATIBLE PHOTODETECTORS BASED ON GE QUANTUMDOTS AND GE/SI HETERO-NANOWIRES

摘要

The present disclosure focuses on Ge nanostructured materials for optoelectronic devices: including high-efficiency quantum dot (QD) photodetectors and Si and Ge heteronanowire solar cells. The common thread among these materials is the use of Ge/Si or Ge/oxide barriers to confine carriers and enhance photoconductive gain in detectors and optical absorption and spectral coverage in solar cells.