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PROCESS FOR FORMING 312 PHASE MATERIALS AND PROCESS FOR SINTERING THE SAME

机译:形成312相材料的过程和烧结相同过程的过程

摘要

A process is provided for forming a material comprising an M3X1Z2 phase comprising the steps of: (a) providing a mixture of (i) at least one transition metal species, (ii) at least one co-metal species selected from the group consisting of aluminum species, germanium species and silicon species, and (iii) at least one non-metal species selected from the group consisting of boron species, carbon species and nitrogen species; (b) heating said mixture to a temperature of about 1000° C. to about 1800° C., in an atmosphere within a substantially enclosed heating zone, for a time sufficient to form said M3X1Z2 phase; wherein the atmosphere has an O2 partial pressure of no greater than about 1x10-6 atm. The process provides a substantially single phase material comprising very little MZx-phase. A process for preparing a dense, substantially single-phase M3X1Z2 phase workpiece includes providing a highly-pure M3X1Z2-phase powder pre-form and sintering said pre-form at a temperature of about 1000° C. to about 1800° C., in an atmosphere within a substantially enclosed heating zone, for a time sufficient to form a dense, substantially single-phase, M3X1Z2-phase workpiece; wherein the atmosphere has an O2 partial pressure of no greater than about 1x10-6 atm.
机译:提供了一种用于形成包含M3X1Z2相的材料的方法,该方法包括以下步骤:(a)提供以下物质的混合物:(i)至少一种过渡金属物质,(ii)至少一种选自以下的共金属物质:铝物种,锗物种和硅物种,以及(iii)至少一种选自硼物种,碳物种和氮物种的非金属物种; (b)在基本上封闭的加热区内的气氛中将所述混合物加热至约1000°C至约1800°C的温度,持续足以形成所述M3X1Z2相的时间;其中大气的O 2分压不大于约1×10-6atm。该方法提供了包含非常少的MZx相的基本上单相的材料。一种制备致密的,基本上单相的M3X1Z2相工件的方法,包括提供高纯度的M3X1Z2相粉末预成型件,并在约1000℃至约1800℃的温度下烧结所述预成型件。在基本上封闭的加热区内的气氛,其时间足以形成致密的,基本上单相的M3X1Z2相工件;其中大气的O 2分压不大于约1×10-6atm。

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