首页> 外国专利> COMPOSITE OXIDE SINTER, PROCESS FOR PRODUCING AMORPHOUS COMPOSITE OXIDE FILM, AMORPHOUS COMPOSITE OXIDE FILM, PROCESS FOR PRODUCING CRYSTALLINE COMPOSITE OXIDE FILM, AND CRYSTALLINE COMPOSITE OXIDE FILM

COMPOSITE OXIDE SINTER, PROCESS FOR PRODUCING AMORPHOUS COMPOSITE OXIDE FILM, AMORPHOUS COMPOSITE OXIDE FILM, PROCESS FOR PRODUCING CRYSTALLINE COMPOSITE OXIDE FILM, AND CRYSTALLINE COMPOSITE OXIDE FILM

机译:复合氧化物烧结体,非晶态复合氧化物膜的制造方法,非晶态复合氧化物膜,结晶态复合氧化物膜的制造方法,以及结晶态复合氧化物膜的制造

摘要

Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn / (In + Sn + Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca / (In + Sn + Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260°C or lower in which resistivity of the film will be 0.4m © cm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260°C or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.
机译:提供一种基本上由铟,锡,钙和氧组成的非晶膜,其中基于Sn /(In + Sn + Ca)的原子比,以5%至15%的比例包含锡,并且以该比例包含钙。以Ca /(In + Sn + Ca)的原子比计,其含量为0.1-2.0%,剩余的是铟和氧。该膜可以通过在260℃或更低的温度下退火而进一步结晶,在该温度下该膜的电阻率将为0.4m©cm或更小。可以在不加热基板或在沉积期间不加水的情况下通过溅射沉积将用作平板显示器中的显示电极等的ITO薄膜制成非晶ITO膜。该ITO膜的特征在于,在这样的高温以下,通过在260℃以下的温度下进行退火而结晶化,结晶化后的电阻率低。因此,本发明的目的是提供一种生产这种膜的方法和一种用于生产这种膜的烧结体。

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