Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 mcm or less as a result of crystallizing the film by annealing the film at a temperature of 260° C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260° C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.
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机译:提供一种非晶态膜,该非晶态膜基本上由铟,锡,镁和氧组成,并且基于Sn /(In + Sn + Mg)的原子比,以5至15%的比例含有锡,并且以0.1至0.1的比例含有镁。通过在260℃下退火使膜结晶化的结果,基于Mg /(In + Sn + Mg)的原子比为2.0%,余量为铟和氧,并且膜电阻率为0.4mcm以下。 ℃或更低。通过溅射沉积而无需加热基板并且不需要在沉积期间添加水的方式,获得了用作平板显示器中的显示电极等的非晶ITO薄膜。该非晶ITO膜具有这样的高温,即通过在260℃以下进行退火而结晶化的特性,并且具有结晶后的电阻率低的特性。还提供了一种制备膜的方法和一种用于制备膜的烧结体。
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