Method of manufacturing an ultra-high-density capacity comprising pillar-shaped capacitors formed on both sides of a substrate

摘要

Invention describes a kind of super High-Density capacitor designs, are integrated in semiconductor substrate, preferably Si substrates, use the side of two chips. The capacitor column and contain electrode (930,950) by dielectric layer (940). By connection (920) offer, in groove, that runs through the chip of whole thickness.