SEMICONDUCTOR ENCAPSULATION STRUCTURE FOR PYROELECTRIC INFRARED SENSOR AND MANUFACTURING METHOD THEREOF AND SENSOR

摘要

Disclosed are a pyroelectric infrared sensor, semiconductor encapsulation structure for the pyroelectric infrared sensor and manufacturing method thereof. The semiconductor encapsulation structure comprises a conductive metal foil (122), a semiconductor bare chip (121) for converting a sensing element output signal, and a plastic encapsulated casing(123); the semiconductor bare chip (121) is bonded on and electrically connected to the conductive metal foil (122); the plastic encapsulated casing (123) is used to encapsulate the conductive metal foil (122) and the bare chip (121); the plastic encapsulated casing (123) exposes a part of the conductive metal foil (122); the exposed part of the conductive metal foil (122) is used to electrically connect the conductive metal foil (122) to the sensing element (14) and tube socket pins (16a, 16b, 16c). The encapsulation structure not only encapsulates the semiconductor bare chip (121) to form a substrate structure and shape required for the pyroelectric infrared sensor, but also has the same functions as existing pyroelectric infrared sensor substrates, such as electric connection function, support function and signal conversion function and the like, thus simplifying the sensor internal structure, improving reliability and reducing cost.