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OXIDIZING PARTICLES BASED SLURRY FOR NOBEL METAL INCLUDING RUTHENIUM CHEMICAL MECHANICAL PLANARIZATION
OXIDIZING PARTICLES BASED SLURRY FOR NOBEL METAL INCLUDING RUTHENIUM CHEMICAL MECHANICAL PLANARIZATION
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机译:基于氧化颗粒的稀有物用于包含钌化学机械平面化的诺贝尔金属
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摘要
A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.
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