首页> 外国专利> BUFFER LAYER FOR IMPROVING THE PERFORMANCE AND STABILITY OF SURFACE PASSIVATION OF SI SOLAR CELLS

BUFFER LAYER FOR IMPROVING THE PERFORMANCE AND STABILITY OF SURFACE PASSIVATION OF SI SOLAR CELLS

机译:改善硅太阳能电池表面钝化性能和稳定性的缓冲层

摘要

Embodiments of the present invention generally relate to the fabrication of solar cells and more specifically to a buffer layer for improving the performance and stability of surface passivation of Si solar cells. Generally, a passivation layer stack containing a buffer layer (interlayer) is formed on a surface of the silicon-based substrate. In one embodiment, the passivation layer stack may be formed on the back surface of the substrate. In another embodiment, the passivation layer stack is formed on the back surface of the substrate and a front emitter region (light receiving surface) of the substrate.
机译:本发明的实施例总体上涉及太阳能电池的制造,并且更具体地涉及用于改善Si太阳能电池的表面钝化的性能和稳定性的缓冲层。通常,在硅基基板的表面上形成包含缓冲层(中间层)的钝化层堆叠。在一实施例中,钝化层堆叠可形成在衬底的背面上。在另一个实施例中,钝化层堆叠形成在基板的背面和基板的前发射器区域(光接收表面)上。

著录项

  • 公开/公告号WO2013130179A2

    专利类型

  • 公开/公告日2013-09-06

    原文格式PDF

  • 申请/专利权人 APPLIED MATERIALS INC.;SHENG SHURAN;ZHANG LIN;

    申请/专利号WO2013US20127

  • 发明设计人 SHENG SHURAN;ZHANG LIN;

    申请日2013-01-03

  • 分类号H01L31/04;H01L31/0216;H01L31/18;

  • 国家 WO

  • 入库时间 2022-08-21 16:31:02

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