首页> 外国专利> SELECTIVE ALIGNMENT GROWTH METHOD OF A ZINC OXIDE NANO PILLAR ARRAY CAPABLE OF IMPORVING PORTABILITY

SELECTIVE ALIGNMENT GROWTH METHOD OF A ZINC OXIDE NANO PILLAR ARRAY CAPABLE OF IMPORVING PORTABILITY

机译:改善便携性的氧化锌纳米柱阵列的选择性对准生长方法

摘要

PURPOSE: A selective alignment growth method of a zinc oxide nano pillar array is provided to produce a soft device by utilizing a one-dimension nanostructure and to improve interface adhesive force of a zinc oxide nano pillar.;CONSTITUTION: The surface of a substrate(1) is processed with plasma(2). An electrode layer(3) is formed on the substrate. A photoresist layer is formed on the substrate. A negative pattern is formed on the photoresist layer. A seed layer(4) is formed on the electrode layer. A nano pillar is formed on the seed layer.;COPYRIGHT KIPO 2013
机译:目的:提供一种氧化锌纳米柱阵列的选择性取向生长方法,以利用一维纳米结构生产软器件并提高氧化锌纳米柱的界面粘合力。;组成:基板表面( 1)用等离子(2)处理。在基板上形成电极层(3)。在基板上形成光致抗蚀剂层。负图案形成在光致抗蚀剂层上。在电极层上形成种子层(4)。在种子层上形成纳米柱。; COPYRIGHT KIPO 2013

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