THIN FILM TRANSISTOR SUBSTRATE WHICH MINIMIZES A PHENOMENON IN WHICH COMMON VOLTAGE PROVIDED TO A COMMON ELECTRODE IS DISTORTED AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to reduce power consumption by forming a data line of a region overlapped with a common electrode in a layer same as a gate line and broadening an interval between the common electrode and the data line.;CONSTITUTION: A gate electrode is connected a gate line formed on a substrate(100). A gate insulating layer(120) comprises a hole(120a) for exposing the substrate. A source electrode(140a) and a drain electrode(140b) are connected to a data line formed on the substrate through the hole. A first protective film(150), a second protective film(160), and a third protective film(180) are formed in order to cover a thin film transistor. A common electrode(170) is formed on the second protective film. A pixel electrode(190) is formed on the third protective film.;COPYRIGHT KIPO 2013