首页> 外国专利> SELF REFRESH CONTROL CIRCUIT PERFORMING A SELF REFRESH OPERATION IN AN INITIALIZATION SECTION OF A MEMORY AND A MEMORY INCLUDING THE SAME

SELF REFRESH CONTROL CIRCUIT PERFORMING A SELF REFRESH OPERATION IN AN INITIALIZATION SECTION OF A MEMORY AND A MEMORY INCLUDING THE SAME

机译:在存储器的初始化部分和包括该存储器的存储器的初始化部分中执行自刷新操作的自刷新控制电路

摘要

PURPOSE: A self refresh control circuit and a memory including the same are provided to reduce a fail in the operation of a memory after an initialization operation by stabilizing internal circuits of the memory.;CONSTITUTION: A self refresh control circuit includes a self refresh control logic(220) and an initial refresh control unit(210). The self refresh control logic controls the self refresh operation of a memory. An initial refresh control unit activates the self refresh control logic for the initialization section of the memory. The initial refresh control unit activates the self refresh control logic in response to the inactivation of a reset signal and inactivates the self refresh control logic in response to the activation of a clock enable signal.;COPYRIGHT KIPO 2013;[Reference numerals] (210) Initial refresh control unit; (220) Self refresh control logic
机译:目的:提供一种自刷新控制电路和包括该自刷新控制电路的存储器,以通过稳定存储器的内部电路来减少初始化操作后存储器的故障。组成:自刷新控制电路包括自刷新控制逻辑(220)和初始刷新控制单元(210)。自刷新控制逻辑控制存储器的自刷新操作。初始刷新控制单元为存储器的初始化部分激活自刷新控制逻辑。初始刷新控制单元响应于重置信号的失活而激活自刷新控制逻辑,并响应于时钟使能信号的激活而失活自刷新控制逻辑。; COPYRIGHT KIPO 2013; [附图标记](210)初始刷新控制单元; (220)自刷新控制逻辑

著录项

  • 公开/公告号KR20130002551A

    专利类型

  • 公开/公告日2013-01-08

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号KR20110063563

  • 发明设计人 HWANG JEONG TAE;

    申请日2011-06-29

  • 分类号G11C11/402;G11C11/401;G11C11/4076;

  • 国家 KR

  • 入库时间 2022-08-21 16:27:55

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