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VANADIUM OXIDE WHICH IMPROVES CHIP RELIABILITY WHILE MAINTAINING DISPERSIBILITY OF DIELECTRIC COMPOSITION, A MANUFACTURING METHOD THEREOF AND A DIELECTRIC COMPOSITION INCLUDING THE SAME
VANADIUM OXIDE WHICH IMPROVES CHIP RELIABILITY WHILE MAINTAINING DISPERSIBILITY OF DIELECTRIC COMPOSITION, A MANUFACTURING METHOD THEREOF AND A DIELECTRIC COMPOSITION INCLUDING THE SAME
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机译:钒氧化物,可在保持介电成分不相容性的同时提高芯片可靠性,其制造方法和包括该介电质的介电成分
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摘要
PURPOSE: A vanadium oxide, a manufacturing method thereof and a dielectric composition including the same are provided to enhance dispersibility by quantitively coating the vanadium composition on colloidal silica.;CONSTITUTION: A vanadium oxide is composed of colloidal silica, metal, and vanadium which are successively coated. The metal coated on the colloidal silica is aluminum (Al) or vanadium (V). The metal-coated colloidal silica and vanadium are included at the weight ratio of 7:1-10:1. The colloidal silica is in monodisperse state. The vanadium is vanadium oxy isopropoxide. A manufacturing method of the vanadium oxide comprises the following steps: coating colloidal silica with metal; and coating the metal coated colloidal silica with vanadium.;COPYRIGHT KIPO 2013
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