首页> 外国专利> VANADIUM OXIDE WHICH IMPROVES CHIP RELIABILITY WHILE MAINTAINING DISPERSIBILITY OF DIELECTRIC COMPOSITION, A MANUFACTURING METHOD THEREOF AND A DIELECTRIC COMPOSITION INCLUDING THE SAME

VANADIUM OXIDE WHICH IMPROVES CHIP RELIABILITY WHILE MAINTAINING DISPERSIBILITY OF DIELECTRIC COMPOSITION, A MANUFACTURING METHOD THEREOF AND A DIELECTRIC COMPOSITION INCLUDING THE SAME

机译:钒氧化物,可在保持介电成分不相容性的同时提高芯片可靠性,其制造方法和包括该介电质的介电成分

摘要

PURPOSE: A vanadium oxide, a manufacturing method thereof and a dielectric composition including the same are provided to enhance dispersibility by quantitively coating the vanadium composition on colloidal silica.;CONSTITUTION: A vanadium oxide is composed of colloidal silica, metal, and vanadium which are successively coated. The metal coated on the colloidal silica is aluminum (Al) or vanadium (V). The metal-coated colloidal silica and vanadium are included at the weight ratio of 7:1-10:1. The colloidal silica is in monodisperse state. The vanadium is vanadium oxy isopropoxide. A manufacturing method of the vanadium oxide comprises the following steps: coating colloidal silica with metal; and coating the metal coated colloidal silica with vanadium.;COPYRIGHT KIPO 2013
机译:用途:提供一种氧化钒,其制造方法和包括该钒的介电组合物,以通过将钒组合物定量地涂覆在胶态二氧化硅上来增强其分散性。组成:氧化钒由胶态二氧化硅,金属和钒组成先后涂上。涂覆在胶体二氧化硅上的金属是铝(Al)或钒(V)。以7:1-10:1的重量比包括金属涂覆的胶体二氧化硅和钒。胶态二氧化硅处于单分散状态。钒是异丙氧基钒。所述钒氧化物的制造方法包括以下步骤:用金属涂覆胶体二氧化硅;以及将所述二氧化硅涂覆到所述氧化硅上。 ;并在金属包覆的胶态二氧化硅上涂上钒。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20130007023A

    专利类型

  • 公开/公告日2013-01-18

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRO-MECHANICS CO. LTD.;

    申请/专利号KR20110062946

  • 发明设计人 YOON YEO JOO;IM CHUL TAEK;

    申请日2011-06-28

  • 分类号C01G31/00;C01B33/149;H01B3/10;H01G9/07;

  • 国家 KR

  • 入库时间 2022-08-21 16:27:51

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号