METHOD FOR PROGRAMMING A NONVOLATILE MEMORY DEVICE CAPABLE OF SHORTENING PROGRAMMING TIME

摘要

PURPOSE: A method for programming a nonvolatile memory device is provided to improve all program distributions by compositively applying a dual pulse program and two-step verification to memory cells.;CONSTITUTION: A first voltage pulse(211) is applied to a word line of a memory cell. It is verified whether a threshold voltage of the memory cell is changed. A second voltage pulse(221) with a threshold voltage over a reference level is applied to the word line of the memory cell and is lower than the first voltage pulse.;COPYRIGHT KIPO 2013