MANUFACTURING METHOD OF HIGH QUALITY MULTICRYSTALLINE SILICON INGOT USING MONOCRYSTALLINE SILICON SEED

摘要

The present invention provides a method for producing a high-quality polycrystalline silicon ingot using a single crystal silicon oxide, and more particularly melt After contact with the single crystal silicon is silicon oxide in the raw material so that the directional solidification is induced by cooling to a method for producing a polycrystalline silicon ingot is similar to the quality of the single crystal silicon. For this purpose, a single-crystal silicon seed filling the silicon raw material in a crucible and brought into contact with a rectangular single crystal silicon oxide on the top center of the silicon melt fabrication step, the silicon melt for producing a silicon melt by melting the silicon raw material with a heater surrounding the crucible the contacting step, the periphery of the heater and the crucible crucible adjustment lowers the temperature in the upper part cooled by inducing coagulation in the lower direction from the upper direction of the silicon melt derived directional solidification stage, the silicon melt as the silicon melt is solidified In the center of the upper crystal and the single crystal silicon is formed, the side and bottom of the silicon melt is made of polycrystalline silicon crystal is formed while including the silicon crystal growth step portion is added to the silicon crystal growth, the silicon crystal grown in the growth step portion is conducted by lifting the silicon crystal has a characteristic to a predetermined height to prevent breakage of the crucible according to the volume change of the silicon crystal portion. ;