首页> 外国专利> ETCHING DEVICE FOR ANALYZING A LARGE-SIZED SAPPHIRE, SUITABLE TO ANALYZE THE DEFECTS OF THE LARGE-SIZED SAPPHIRE

ETCHING DEVICE FOR ANALYZING A LARGE-SIZED SAPPHIRE, SUITABLE TO ANALYZE THE DEFECTS OF THE LARGE-SIZED SAPPHIRE

机译:用于分析大尺寸蓝宝石的蚀刻装置,适用于分析大尺寸蓝宝石的缺陷

摘要

PURPOSE: An etching device for analyzing a large-sized sapphire is provided to obtain the etching device for an EDP(Electronic Data Processing) measurement optimized for the sapphire and to etch a plurality of the large-sized sapphires at one time.;CONSTITUTION: An etching device for analyzing a large-sized sapphire comprises a housing unit(1), an etching chamber(2), a temperature control unit(3), a heating unit, and a wafer cassette. The etching chamber accommodates etching solution, forms an internal space to dip the sapphire into the etching solution, and has an opening on the top surface. The temperature control unit is installed inside the housing unit, thereby being installed outside of the etching chamber. The wafer cassette includes a plurality of slots for loading a plurality of sapphire wafers and is inserted into the etching chamber.;COPYRIGHT KIPO 2013
机译:目的:提供一种用于分析大型蓝宝石的蚀刻装置,以获得用于针对蓝宝石进行优化的EDP(电子数据处理)测量的蚀刻装置,并一次蚀刻多个大型蓝宝石。一种用于分析大型蓝宝石的蚀刻装置,包括:壳体单元(1),蚀刻室(2),温度控制单元(3),加热单元和晶片盒。蚀刻室容纳蚀刻溶液,形成内部空间以将蓝宝石浸入蚀刻溶液中,并且在顶表面上具有开口。温度控制单元被安装在容纳单元的内部,从而被安装在蚀刻室的外部。晶圆盒包括多个用于装载多个蓝宝石晶圆的插槽,并插入蚀刻室。; COPYRIGHT KIPO 2013

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