ANNEALING METHOD FOR REDUCING DEFECTS OF EPITAXIAL FILMS BY USING VAPOR PHASE DEPOSITION

摘要

PURPOSE: An annealing method for reducing defects of epitaxial films is provided to reduce the lattice strain of the epitaxial film.;CONSTITUTION: An epitaxial film(20) is deposited. An annealing process is performed on the epitaxial film. A substrate(10) and the epitaxial film are positioned in a high temperature atmosphere. A pressure transfer medium(30) surrounds the substrate and the epitaxial film. A pressure device(40) is installed in order to provide uniform pressure to the epitaxial film.;COPYRIGHT KIPO 2013