DEPOSITION APPARATUS AND A DEPOSITION METHOD FOR MANUFACTURING A HIGH QUALITY SILICON CARBIDE WAFER

摘要

PURPOSE: A deposition apparatus and a deposition method are provided to reduce temperature difference between a susceptor and reaction gas or carrier gas flowing in a source gas line, and to prevent the nonuniformity or the rapid decrease of temperature in the susceptor.;CONSTITUTION: A susceptor accommodates a substrate arranged in a chamber(100). The susceptor includes an upper plate(210), a lower plate, and a side plate. A source gas line(300) supplies the source gas for forming a thin film on the substrate to the susceptor. A first heating member(500) heats the source gas line. A second heating member(600) surrounds the outer surface of the chamber.;COPYRIGHT KIPO 2013