首页> 外国专利> SEMICONDUCTOR MEMORY DEVICE, A SUCCESSIVE PROGRAM CONTROL CIRCUIT, AND A PROGRAMMING METHOD THEREOF CAPABLE OF IMPROVING BUFFERED OVERWRITE OPERATION EFFICIENCY

SEMICONDUCTOR MEMORY DEVICE, A SUCCESSIVE PROGRAM CONTROL CIRCUIT, AND A PROGRAMMING METHOD THEREOF CAPABLE OF IMPROVING BUFFERED OVERWRITE OPERATION EFFICIENCY

机译:半导体存储器,一种成功的程序控制电路以及一种能够改善缓冲过写操作效率的编程方法

摘要

PURPOSE: A semiconductor memory device, a successive program control circuit, and a programming method thereof are provided to improve program efficiency by successively programming data without the repetitive reception of a program command and data.;CONSTITUTION: A program pulse generating unit(100) generates a write control signal and a program completion signal in response to a programming enable signal. A successive program control circuit(200) generates a successive programming enable signal in response to a program address and a data count signal by receiving a buffered program command or a buffered overwrite command. A controller(300) generates the programming enable signal in response to the successive programming enable signal.;COPYRIGHT KIPO 2013;[Reference numerals] (100) Program pulse generating unit; (200) Successive program control circuit; (300) Controller; (400) Write driver; (500) Memory unit
机译:目的:提供一种半导体存储器件,连续的程序控制电路及其编程方法,以通过在不重复接收程序命令和数据的情况下连续地对数据进行编程来提高程序效率。组成:程序脉冲产生单元(100)响应于编程使能信号,产生写控制信号和编程完成信号。接续的程序控制电路(200)通过接收缓冲的编程命令或缓冲的改写命令,响应于程序地址和数据计数信号,产生接续的编程使能信号。控制器(300)响应于连续的编程使能信号而生成编程使能信号。; COPYRIGHT KIPO 2013; [附图标记](100)编程脉冲产生单元;以及(200)连续程序控制电路; (300)控制器; (400)编写驱动程序; (500)内存单元

著录项

  • 公开/公告号KR20130049419A

    专利类型

  • 公开/公告日2013-05-14

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号KR20110114428

  • 发明设计人 AN YONG BOK;

    申请日2011-11-04

  • 分类号G11C16/10;G11C16/06;G11C13/02;

  • 国家 KR

  • 入库时间 2022-08-21 16:27:10

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