METHOD FOR MANUFACTURING A LOW TEMPERATURE POLYCRYSTALLINE THIN FILM USING A METAL INDUCED CRYSTALLIZATION METHOD

摘要

PURPOSE: A method for manufacturing a low temperature polycrystalline thin film is provided to increase the grain size of a thin film crystallized at a low temperature and to improve productivity.;CONSTITUTION: An insulating layer is formed on a substrate(S1). A metal layer is formed on the insulating layer(S2). A metal layer is heat-treated to form a metal oxide layer(S3). A first amorphous layer is formed on the metal oxide layer(S4). A second amorphous layer is formed on the first amorphous layer(S5). A seed layer is formed by using the compound of the first amorphous layer and the second amorphous layer(S6). A third amorphous layer is formed on the seed layer(S7). The third amorphous layer is heat-treated to form a crystalline thin film(S8).;COPYRIGHT KIPO 2013;[Reference numerals] (S1) Step of forming an insulating layer; (S2) Step of forming a metal layer; (S3) Step of forming a metal oxide layer; (S4) Step of forming a first amorphous layer; (S5) Step of forming a second amorphous layer; (S6) Step of forming a seed layer; (S7) Step of forming a third amorphous layer; (S8) Step of crystallization