首页> 外国专利> TEXTURE ETCHANT COMPOSITION OF A CRYSTALLINE SILICON WAFER, CAPABLE OF MANUFACTURING A TEXTURE WITH A LOW REFLECTIVITY BY FORMING A UNIFORM MICRO PYRAMID STRUCTURE, AND AN ETCHING METHOD OF TEXTURE

TEXTURE ETCHANT COMPOSITION OF A CRYSTALLINE SILICON WAFER, CAPABLE OF MANUFACTURING A TEXTURE WITH A LOW REFLECTIVITY BY FORMING A UNIFORM MICRO PYRAMID STRUCTURE, AND AN ETCHING METHOD OF TEXTURE

机译:结晶硅晶片的纹理附剂组成,能够通过形成均匀的微金字塔结构来制造低反射率的纹理,以及一种纹理的刻蚀方法

摘要

PURPOSE: A texture etchant composition of a crystalline silicon wafer is provided to minimize quality deviation, and to improve uniformity of a texture, thereby maximizing absorption amount of a solar light and to reduce light reflectivity.;CONSTITUTION: A texture etchant composition of a crystalline silicon wafer comprises a polycarboxylic acid-based polymer. The polycarboxylic acid-based polymer includes a repeating unit represented by chemical formula 1. In chemical formula 1, each of R1, R2, and R3 is independently hydrogen, C1-5 alkyl group, or -(CH2)m2COOM2; In chemical formula 1, each of M1 and M2 is hydrogen alkali metal, alkali earth metal, ammonium group, or C1-10 alkyl ammonium group substitutable by a hydroxyl group; and each of m1 and m2 is independently an integer from 0-2.;COPYRIGHT KIPO 2013
机译:目的:提供晶体硅晶片的纹理蚀刻剂组合物以最小化质量偏差,并改善纹理的均匀性,从而最大化太阳光的吸收量并降低光反射率。硅晶片包括基于聚羧酸的聚合物。所述基于多元羧酸的聚合物包括由化学式1表示的重复单元。在化学式1中,R 1,R 2和R 3各自独立地为氢,C 1-5烷基或-(CH 2)m 2 COOM 2。在化学式1中,M1和M2各自为氢碱金属,碱土金属,铵基或可被羟基取代的C1-10烷基铵基;并且m1和m2各自独立地是0-2之间的整数。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20130068759A

    专利类型

  • 公开/公告日2013-06-26

    原文格式PDF

  • 申请/专利权人 DONGWOO FINE-CHEM CO. LTD.;

    申请/专利号KR20110136112

  • 发明设计人 LEE JAE YUN;PARK MYUN KYU;HONG HYUNG PYO;

    申请日2011-12-16

  • 分类号C09K13/00;C09K13/06;C09K13/08;

  • 国家 KR

  • 入库时间 2022-08-21 16:26:52

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