首页> 外国专利> EPITAXIAL WAFER MANUFACTURING APPARATUS AND EPITAXIAL WAFER MANUFACTURING METHOD CAPABLE OF MANUFACTURING HIGH QUALITY EPITAXIAL WAFER WITH HIGHER EFFICIENCY

EPITAXIAL WAFER MANUFACTURING APPARATUS AND EPITAXIAL WAFER MANUFACTURING METHOD CAPABLE OF MANUFACTURING HIGH QUALITY EPITAXIAL WAFER WITH HIGHER EFFICIENCY

机译:能够制造具有更高效率的高质量表皮晶圆的表皮晶圆制造装置和表皮晶圆制造方法

摘要

PURPOSE: Epitaxial wafer manufacturing apparatus and epitaxial wafer manufacturing method are provided to reduce an epitaxial wafer manufacturing process time by successively processing an epitaxial layer deposition step, an annealing step and a cooling step at once.;CONSTITUTION: A wafer is prepared within a wafer supply unit(ST10). A first shutter is opened(ST20). The wafer is moved from the wafer supply unit to an epitaxial wafer deposition unit(ST30). The first shutter is closed(ST40). A second shutter is opened(ST50). The wafer is moved from the epitaxial wafer deposition unit to an annealing unit(ST60). The second shutter is closed(ST70).;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Start; (BB) End; (ST10) Step of preparing a wafer; (ST20) Open a first shutter; (ST30,ST60) Move the wafer; (ST40) Close the first shutter; (ST50) Open a second shutter; (ST70) Close the second shutter
机译:目的:提供外延晶片制造设备和外延晶片制造方法,以通过依次连续处理外延层沉积步骤,退火步骤和冷却步骤来减少外延晶片制造工艺时间;组成:在晶片内制备晶片供应单元(ST10)。第一快门打开(ST20)。将晶片从晶片供应单元移动到外延晶片沉积单元(ST30)。第一快门关闭(ST40)。第二快门打开(ST50)。将晶片从外延晶片沉积单元移动到退火单元(ST60)。第二个快门关闭(ST70)。; COPYRIGHT KIPO 2013; [参考数字](AA)启动; (BB)结束; (ST10)准备晶片的步骤; (ST20)打开第一百叶窗; (ST30,ST60)移动晶片; (ST40)关闭第一快门; (ST50)打开第二个快门; (ST70)关闭第二个快门

著录项

  • 公开/公告号KR20130069249A

    专利类型

  • 公开/公告日2013-06-26

    原文格式PDF

  • 申请/专利权人 LG INNOTEK CO. LTD.;

    申请/专利号KR20110136877

  • 发明设计人 KANG SEOK MIN;

    申请日2011-12-16

  • 分类号H01L21/20;H01L21/02;

  • 国家 KR

  • 入库时间 2022-08-21 16:26:52

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