首页> 外国专利> LOW VISCOSITY ETCHING SOLUTION FOR FORMING A METAL WIRE CAPABLE OF OBTAINING EXCELLENT PROFILE, AND CONTROLLING ETCHING RATE

LOW VISCOSITY ETCHING SOLUTION FOR FORMING A METAL WIRE CAPABLE OF OBTAINING EXCELLENT PROFILE, AND CONTROLLING ETCHING RATE

机译:低粘度蚀刻解决方案,用于形成具有出色轮廓并控制蚀刻速率的金属线

摘要

PURPOSE: A low viscosity etching solution is provided to control etching rate in wide range, to maintain etching uniformity, and to reduce taper angle.;CONSTITUTION: An etching solution not including hydroperoxide includes 5-40 wt% of sulfuric acid, 0.5-30 wt% of a nitric acid, 0.1-10 wt% of halogen additives, 0.5-20 wt% of an inorganic chelate agent, and residual water. The halogen additives are selected from HF, (NH4)F, (NH4)HF2, KF, NaF, MgF2, AlF3, HCl, (NH4)Cl, KCl, NaCl, MgCl2, FeCl3, AlCl3, HBr, (NH4)Br, KBr, NaBr, MgBr2, AlBr3, HI, (NH4)I, KI, NaI, MgI2, and A1I3.;COPYRIGHT KIPO 2013
机译:用途:提供低粘度蚀刻溶液以在宽范围内控制蚀刻速率,以保持蚀刻均匀性并减小锥角。;组成:不包含氢过氧化物的蚀刻溶液包含5-40 wt%的硫酸,0.5-30重量%的硝酸,0.1-10重量%的卤素添加剂,0.5-20重量%的无机螯合剂和残留水。卤素添加剂选自HF,(NH4)F,(NH4)HF2,KF,NaF,MgF2,AlF3,HCl,(NH4)Cl,KCl,NaCl,MgCl2,FeCl3,AlCl3,HBr,(NH4)Br, KBr,NaBr,MgBr2,AlBr3,HI,(NH4)I,KI,NaI,MgI2和AlI3。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20130073924A

    专利类型

  • 公开/公告日2013-07-03

    原文格式PDF

  • 申请/专利权人 DONGWOO FINE-CHEM CO. LTD.;

    申请/专利号KR20130057656

  • 发明设计人 LEE SUCK JUN;LEE JOON WOO;SHIN HYE RA;

    申请日2013-05-22

  • 分类号C09K13/04;C09K13/00;C23F1/20;H01L21/306;

  • 国家 KR

  • 入库时间 2022-08-21 16:26:45

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号