CMP SLURRY COMPOSITION MAINTAINING THE POLISHING SPEED TO THE OXIDE FILM EXISTING IN THE UPPER LAYER OF THE NITRIDE FILM OVER 3000 ANGSTROM, AND A POLISHING METHOD USING THE SAME

摘要

PURPOSE: A CMP slurry composition is provided to be able to minimize the dishing on the oxide film over a trench layer while maintaining the polishing speed ratio of the oxide film on the trench layer to the nitride film layer over 10.;CONSTITUTION: A CMP slurry composition comprises metal oxide particles having a positive Zeta electric potential, zwitterionic compound, cationic surfactant, and ultra-pure water. The metal oxide particles are manufactured by calcination, flame oxidation or hydrothermal synthesis. The metal oxide particles having a positive Zeta electric potential have 70-150 nm of an average particle diameter and 10-50 m^2/g of a specific surface area. The metal oxide particles having a positive Zeta electric potential are ceria particles. A polishing method comprises a step of polishing a semiconductor wafer by using the CMP slurry composition.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) First grinding; (BB) Convex part; (CC) Concave part; (DD) Second grinding; (EE) Third grinding