FLASH MEMORY SYSTEM CAPABLE OF IMPROVING THE RELIABILITY OF LEAD AND A LEAD METHOD OF THE FLASH MEMORY SYSTEM

摘要

PURPOSE: A flash memory system and a lead method of the flash memory system are provided to quickly and accurately correct a lead error, thereby reducing the overhead of the system.;CONSTITUTION: In a wear-out table which consider each of the block of flash memory as an index, the selection index of the selection block is updated (S120). When the current request of the lead retry of the selection block is received, with reference to the lead retry table which corresponds to the wear-out included in the selection index, the lead level starting the lead retry of the selection block is determined (S140).;COPYRIGHT KIPO 2013;[Reference numerals] (S120) Update the indexes for selected blocks in a wear-out degree table in which each block of a flash memory serves as an index; (S140) Set a reading level at which a reading re-try is initiated for a selected block based on a reading re-try table corresponding to a wear-out degree included in a selected index when a request for a reading re-try for the selected block is received