首页> 外国专利> INGOT GROWING APPARATUS AND A METHOD FOR MEASURING A MELT GAP, CAPABLE OF MINIMIZING THE QUALITY VARIATION OF A GROWN INGOT

INGOT GROWING APPARATUS AND A METHOD FOR MEASURING A MELT GAP, CAPABLE OF MINIMIZING THE QUALITY VARIATION OF A GROWN INGOT

机译:能够最小化长牙质量变化的熔化物生长装置和熔融间隙的测量方法

摘要

PURPOSE: An ingot growing apparatus and a method for measuring a melt gap are provided to minimize measurement errors by including an interval measuring unit to measure the melt gap by using the brightness of light.;CONSTITUTION: A crucible (20) receives silicon melt. A heat shield (40) surrounds an ingot. A bar part (50) is arranged on the lower side of the heat shield. An interval measuring unit (62) measures an interval between the surface of the silicon melt and the lower side of the bar part. The interval measuring unit measures the diameter of the ingot by measuring the brightness of light.;COPYRIGHT KIPO 2013
机译:目的:提供了一种锭生长设备和一种测量熔体间隙的方法,通过包括一个间隔测量单元来利用光的亮度来测量熔体间隙,从而使测量误差最小化。组成:坩埚(20)接收硅熔体。隔热罩(40)围绕铸锭。杆部(50)布置在隔热罩的下侧。间隔测量单元(62)测量硅熔体的表面与棒状部分的下侧之间的间隔。间隔测量单元通过测量光的亮度来测量铸锭的直径。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20130087122A

    专利类型

  • 公开/公告日2013-08-06

    原文格式PDF

  • 申请/专利权人 LG SILTRON INCORPORATED;

    申请/专利号KR20120008143

  • 发明设计人 CHO MIN CHEOL;KIM JAE SUNG;

    申请日2012-01-27

  • 分类号C30B15/00;C30B29/06;H01L21/02;

  • 国家 KR

  • 入库时间 2022-08-21 16:26:32

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