THIN FILM TRANSISTOR CAPABLE OF LOWERING THE OPERATING TEMPERATURE OF A DEVICE AND OBTAINING HIGH RELIABILITY

摘要

PURPOSE: A thin film transistor is provided to reduce the deterioration of a device by forming separated channels for decreasing the operating temperature and power of the device.;CONSTITUTION: A gate electrode (120) is formed on one surface of a substrate (110). A gate insulating layer (130) is formed on the upper part of the substrate and covers the gate electrode. A semiconductor layer includes a channel region (140), a source region (150), and a drain region (160). The channel region is formed between the source region and the drain region. The channel region includes channels which are separated from each other. A passivation layer (170) covers a part of the semiconductor layer.;COPYRIGHT KIPO 2013