首页> 外国专利> METHODS OF FORMING INTEGRATED CIRCUIT DEVICES USING MODIFIED RECTANGULAR MASK PATTERNS TO INCREASE RELIABILITY OF CONTACTS TO ELECTRICALLY CONDUCTIVE LINES

METHODS OF FORMING INTEGRATED CIRCUIT DEVICES USING MODIFIED RECTANGULAR MASK PATTERNS TO INCREASE RELIABILITY OF CONTACTS TO ELECTRICALLY CONDUCTIVE LINES

机译:使用改进的矩形面罩图案来形成集成电路设备以提高对导电线路的可靠性的方法

摘要

PURPOSE: A method for manufacturing an integrated circuit device using a modified rectangular mask pattern for increasing the contact reliability of a conductive line is provided to implement high integration with an electrical contact. CONSTITUTION: A first conductive line (112a) and a second conductive line (112b) are located on an integrated circuit board in parallel. The first conductive line and the second conductive line are selectively etched on a pair of electric interconnections with facing ends. The facing ends are defined by using a photolithography mask with a modified rectangular mask pattern. A photoresist pattern (104a) is defined on the integrated circuit board by using the modified rectangular mask pattern. The modified rectangular mask pattern includes a first mask pattern (100) and a second mask pattern (102a,102b) which are rectangular.
机译:目的:提供一种用于使用改进的矩形掩模图案制造集成电路器件的方法,以提高导线的接触可靠性,以实现与电触点的高度集成。组成:第一条导线(112a)和第二条导线(112b)平行位于集成电路板上。在具有相对端的一对电互连上选择性地蚀刻第一导线和第二导线。通过使用具有改进的矩形掩模图案的光刻掩模限定相对的端部。通过使用修改的矩形掩模图案在集成电路板上限定光致抗蚀剂图案(104a)。修改后的矩形掩模图案包括矩形的第一掩模图案(100)和第二掩模图案(102a,102b)。

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