Methods of forming integrated circuit devices using modified rectangular mask patterns to increase reliability of contacts to electrically conductive lines

摘要

An integrated circuit device manufacturing method includes first and second conductive lines disposed side by side on an integrated circuit substrate. The steps are performed to selectively etch each of the first and second conductive lines in each of the wire pairs having opposite ends that are separate from each other. This selective etching step is performed using a photolithographic mask with a modified rectangular mask pattern to define the shape of the opposing ends of each of the wiring pairs.