Methods of forming integrated circuit devices using modified rectangular mask patterns to increase reliability of contacts to electrically conductive lines

摘要

Methods of forming integrated circuit devices include forming first and second electrically conductive lines at side-by-side locations on an integrated circuit substrate. Steps are performed to selectively etch each of the first and second electrically conductive lines into a respective pair of interconnects having facing ends that are separated from each other. This selective etching step is performed using a photolithography mask having a modified-rectangular mask pattern thereon, which is configured to define a shape of the facing ends of each of the pair of interconnects.