METHOD FOR MANUFACTURING A NITRIDE-GALLIUM-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE CAPABLE OF REDUCING OHMIC CONTACT RESISTANCE

摘要

PURPOSE: A method for manufacturing a nitride-gallium-based semiconductor light emitting device is provided to improve electrical conductivity by increasing the mobility and the doping concentration of holes.;CONSTITUTION: A light emitting structure (140) is formed on a substrate. The light emitting structure includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer (130). A first thermal process is performed on the p-type semiconductor layer. An organic cleaning process is performed on the p-type semiconductor layer. A mask pattern (160) is formed on the upper surface of the p-type semiconductor layer.;COPYRIGHT KIPO 2013