FERROELECTRIC PZT THIN FILM WITH HIGH LIFETIME RELIABILITY BY A RETARDATION PHENOMENON OF A LEAK CURRENT MAXIMUM VALUE ACCOMPANYING THE MOBILITY LOSS OF OXYGEN DEFECT AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A ferroelectric PZT thin film maintains dielectric performance similar to a conventional ferroelectric PZT thin film and has improved lifetime reliability.;CONSTITUTION: A ferroelectric PZT thin film is formed on the lower electrode (11) of a substrate (10) which has the lower electrode on which a crystal plane is aligned in an axial direction. The ferroelectric thin film has an orientation control layer (12) which is formed on the lower electrode and has a crystal orientation-controlled layer with a thickness of 45-270 nm; a film thickness-controlling layer (13) which is formed on the crystal orientation-controlled layer and has the same crystal orientation as the crystal orientation of the orientation-controlled layer; and an interface (14) between the orientation-controlled layer and a film thickness-controlling layer.;COPYRIGHT KIPO 2013;[Reference numerals] (10) Substrate; (11) Lower electrode; (12) Orientation control layer; (13) Film thickness-controlling layer; (14) Interface