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Defect structures and fatigue in ferroelectric PZT thin films

机译:铁电PZT薄膜的缺陷结构和疲劳

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A thermally stimulated current (TSC) technique has been used to characterize natural and electric-field-induced defect distributions in PZT (lead zirconate titanate) films. The principal defects give rise to TSC peaks near 400 K and 500 K, with defect concentrations of about 10/sup 21/ cm/sup -3/ and an activation energy of about 0.8 eV. Changes in the defect structures as a function of the number of switching cycles and processing conditions are described, and their relationship to fatigue are discussed. It is suggested that the defects distributions measured by TSC arise from extended defects rather than from point defects. Domain splitting and pinning as a result of such defects generated during polarization reversals may account for fatigue in PZT films.
机译:热激励电流(TSC)技术已用于表征PZT(钛酸锆钛酸铅)薄膜中自然和电场引起的缺陷分布。主要缺陷会在400 K和500 K附近产生TSC峰,缺陷浓度约为10 / sup 21 / cm / sup -3 /,活化能约为0.8 eV。描述了缺陷结构随开关循环次数和加工条件的变化,并讨论了它们与疲劳的关系。建议通过TSC测量的缺陷分布是由扩展缺陷而不是点缺陷引起的。由于极化反转过程中产生此类缺陷而导致的畴分裂和钉扎现象可能是PZT膜疲劳的原因。

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