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SEMICONDUCTOR MEMORY DEVICE INCLUDING A CELL-TYPE POWER DECOUPLING CAPACITOR AND A METHOD OF DISPOSING THE CELL-TYPE POWER DECOUPLING CAPACITOR

机译:包括电池型功率去耦电容器的半导体存储器装置和布置电池型功率去耦电容器的方法

摘要

PURPOSE: A semiconductor memory device including a cell-type power decoupling capacitor and a method of disposing the cell-type power decoupling capacitor are insensitive to noise by stabilizing a power voltage.;CONSTITUTION: A cell-type power decoupling capacitor (200) is formed on a semiconductor substrate by using a stack cell capacitor process, stabilizes a power voltage, and provides the power voltage for an internal circuit (150). The cell-type power decoupling capacitor includes a first conductive layer, a second conductive layer, and a dielectric layer. The first conductive layer is connected to a high power voltage. The second conductive layer is connected to a low power voltage and is separated from the first conductive layer at a first distance. The dielectric layer is interposed between the first conductive layer and the second conductive layer.;COPYRIGHT KIPO 2013
机译:目的:一种包括单元型功率去耦电容器的半导体存储器件和一种设置单元型功率去耦电容器的方法通过稳定电源电压对噪声不敏感。组成:单元型功率去耦电容器(200)通过使用堆叠单元电容器工艺在半导体衬底上形成半导体衬底,稳定电源电压,并为内部电路(150)提供电源电压。单元型功率去耦电容器包括第一导电层,第二导电层和介电层。第一导电层连接到高功率电压。第二导电层连接到低电源电压,并且以第一距离与第一导电层分离。介电层介于第一导电层和第二导电层之间。COPYRIGHTKIPO 2013

著录项

  • 公开/公告号KR20130111782A

    专利类型

  • 公开/公告日2013-10-11

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20120033937

  • 发明设计人 YOO HAN SIK;OH SE IL;

    申请日2012-04-02

  • 分类号G11C11/34;H01L27/105;H01L21/8239;

  • 国家 KR

  • 入库时间 2022-08-21 16:26:07

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