首页> 外国专利> MANUFACTURING METHOD OF MULTI-COMPONENT METAL OXIDES THIN FILM HAVING SUPERLATTICE STRUCTURE IN THERMOELECTRIC MODULE

MANUFACTURING METHOD OF MULTI-COMPONENT METAL OXIDES THIN FILM HAVING SUPERLATTICE STRUCTURE IN THERMOELECTRIC MODULE

机译:热电模块中具有超晶格结构的多金属氧化物薄膜的制造方法

摘要

PURPOSE: A method for manufacturing a multi-component metal oxide thin film with a superlattice structure of a thermoelectric device is provided to reduce manufacturing costs by not requiring a vacuum chamber to form a thin film. CONSTITUTION: A ZnO buffer layer is formed on a substrate by a sputtering method(S1). A thin film is formed by rotating the substrate with a buffer layer using a spin coating method to drop metal source containing solutions on the rotating substrate(S2). The thin film formed with the spin-coating method is dried(S3). A metal oxide thin film with the superlattice structure is formed by thermally processing the dried thin film(S4). [Reference numerals] (S1) Forming a ZnO buffer layer on a substrate by sputtering; (S2) Forming a thin film on a buffer layer with a spin-coating method; (S3) Drying a thin film; (S4) Forming a metal oxide thin film with a superlattice structure by thermally processing a thin film
机译:目的:提供一种用于制造具有热电装置的超晶格结构的多组分金属氧化物薄膜的方法,以通过不需要真空室形成薄膜来降低制造成本。组成:通过溅射法在基板上形成ZnO缓冲层(S1)。通过使用旋涂法通过旋转带有缓冲层的基板来形成薄膜,以将包含金属源的溶液滴在旋转的基板上(S2)。将通过旋涂法形成的薄膜干燥(S3)。通过对干燥的薄膜进行热处理来形成具有超晶格结构的金属氧化物薄膜(S4)。 [附图标记](S1)通过溅射在基板上形成ZnO缓冲层; (S2)通过旋涂法在缓冲层上形成薄膜; (S3)干燥薄膜; (S4)通过对薄膜进行热处理来形成具有超晶格结构的金属氧化物薄膜

著录项

  • 公开/公告号KR101228649B1

    专利类型

  • 公开/公告日2013-01-31

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20110059721

  • 发明设计人 조형균;서동규;김준현;

    申请日2011-06-20

  • 分类号H01L35/34;H01L35/22;H01L35/02;

  • 国家 KR

  • 入库时间 2022-08-21 16:25:48

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