首页> 外国专利> Device and method for wavefront measurement of an optical imaging system, and a microlithography projection exposure machine

Device and method for wavefront measurement of an optical imaging system, and a microlithography projection exposure machine

机译:用于光学成像系统的波前测量的装置和方法,以及微光刻投影曝光机

摘要

1. Device and method for measuring a wavefront of an optical imaging system and microlithography projection exposure machine. ; 2.1 The invention groups attached micro lithography apparatus and a method for such an apparatus and the wavefront measurement of the optical imaging system exposure relates. ; 2.2 In accordance with the present invention, wherein the device are disposed to the object side of the subject imaging system, the object-side periodic structure (2), the optical element 1 and the measured object side having a periodic structure wave generating unit including a light source for irradiating with radiation, and the other hand is placed on the image side of the subject imaging systems, image-side periodic structure (4) optical element (3) with the imaged object side and the image side periodic structure having a periodic includes detection unit to the detection unit having a device for detecting the overlapping pattern of the structure. Doedoe designed to restrict each spectrum (6) of the measuring radiation emitted from the wave front generated yunitneun field point (7), measuring the radiation is at least one pupil plane of the optical imaging system, in each case in which the radiation from each field point (7) is one of the sub-area 8 only to the design of the irradiation (9). ; 2.3 purpose, for example, a wavefront measurement of the microlithography projection lens.
机译:1.一种用于测量光学成像系统和微光刻投影曝光机的波前的装置和方法。 ; 2.1本发明的附有微光刻设备的组以及用于这种设备的方法与光学成像系统曝光的波前测量有关。 ; 2.2。根据本发明,其中所述装置被布置在所述对象成像系统的物体侧,所述物体侧周期性结构(2),所述光学元件1和所述被测物体侧具有周期性结构波产生单元,所述周期性结构波产生单元包括:另一方面,将另一只手放在被摄体成像系统的像侧,像侧周期性结构(4)光学元件(3)的成像对象侧和像侧周期性结构具有周期性检测单元包括检测单元,该检测单元具有用于检测结构的重叠图案的装置。 Doedoe设计为限制从波前产生的yunitneun场点(7)发出的测量辐射的每个光谱(6),测量辐射是光学成像系统的至少一个光瞳平面,在每种情况下,来自每个场点(7)是仅用于辐射(9)设计的子区域8之一。 ; 2.3目的,例如,微光刻投影透镜的波前测量。

著录项

  • 公开/公告号KR101244103B1

    专利类型

  • 公开/公告日2013-03-25

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20067013832

  • 发明设计人 에메르 볼프강;

    申请日2004-01-16

  • 分类号G01B9/02;

  • 国家 KR

  • 入库时间 2022-08-21 16:25:32

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号