The present invention relates to uncooled infrared detector integral window and a method of manufacturing the infrared detector of the present invention manufacturing method , the wafer and the integration of the signal acquisition circuit , the first step (S10) for processing the sensor array arrangement consisting of a plurality of infrared detection elements to the upper part of the wafer; The second process to the wafer in order to seal the upper array in a vacuum for bonding the window cap (S20) and ; Is composed of the third step (S30) of dicing the wafer bonding is completed, a chip window cap unit in the second step (S20), the device wafer and wafer-level vacuum packaged in a transparent window in the infrared cap to the productivity and yield it is possible to improve . ; 展开▼