首页> 外国专利> FLEXIBLE FORCE OR PRESSURE SENSOR ARRAY USING SEMI-CONDUCTOR STRAIN GAUGE WHICH IS ADAPTING CMOS CIRCUIT, FABRICATION METHOD THEREOF AND MEASUREMENT METHOD THEROF

FLEXIBLE FORCE OR PRESSURE SENSOR ARRAY USING SEMI-CONDUCTOR STRAIN GAUGE WHICH IS ADAPTING CMOS CIRCUIT, FABRICATION METHOD THEREOF AND MEASUREMENT METHOD THEROF

机译:使用适用于CMOS电路的半导电应变片的柔性力或压力传感器阵列,其制造方法和其测量方法

摘要

The present invention relates to a force or pressure sensor array of a semiconductor strain gauge using CMOS (Complementary metal-oxide-semiconductor) circuit signal processing method. More specifically, a plurality of polymer films in which a plurality of units are formed in a predetermined array pattern to have a semiconductor strain gauge deformed by a force or pressure, and a semiconductor strain gauge is provided between the film surfaces in contact with and in contact with each other. Formed on the upper and lower surfaces of the insulating layer using any one of a layer and a pair of polymer film layer to form a CMOS circuit, connected to each of the units to form an electrode, and outputs a deformation signal output by the deformation of each unit And a switch controller configured to control the plurality of switches and switches connected to the ends of each of the second signal lines and sequentially scan each of the second signal lines so that current flows in any one of the second signal lines. A circuit board; And a pair of elastomer layers formed on both sides of the circuit board so that the circuit board is included therein. The present invention relates to a force or pressure sensor array of a semiconductor strain gauge to which a CMOS circuit signal processing method is applied.
机译:本发明涉及一种使用CMOS(互补金属氧化物半导体)电路信号处理方法的半导体应变仪的力或压力传感器阵列。更具体地,在多个聚合物膜中,多个单元以预定的阵列图案形成,以具有因力或压力而变形的半导体应变仪,并且在与该膜接触的膜表面之间设置半导体应变仪。彼此接触。使用一层和一对聚合物膜层中的任何一层在绝缘层的上下表面上形成以形成CMOS电路,并与每个单元相连以形成电极,并输出通过变形输出的变形信号开关控制器,其被配置为控制多个开关和连接到每个第二信号线的端部的开关,并顺序地扫描每个第二信号线,以使电流在每个第二信号线中流动。电路板;一对弹性体层形成在电路板的两侧,从而电路板被包含在其中。半导体应变仪的力或压力传感器阵列技术领域本发明涉及应用了CMOS电路信号处理方法的半导体应变仪的力或压力传感器阵列。

著录项

  • 公开/公告号KR101259782B1

    专利类型

  • 公开/公告日2013-05-03

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20110018473

  • 申请日2011-03-02

  • 分类号G01L1/22;H01L41;H01L27;H01L21/8238;

  • 国家 KR

  • 入库时间 2022-08-21 16:25:16

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