FINFET STRUCTURES WITH STRESS-INDUCING SOURCE/DRAIN-FORMING SPACERS AND METHODS FOR FABRICATING SAME

摘要

Stress-induced source / drain - manufacturing of a FinFET structure with formation method and FinFET with these spacer spacer The structure is provided herein. In one embodiment, a method of manufacturing a FinFET structure involves preparing a plurality of fins placed in parallel on a semiconductor substrate. The pins each have a side wall. The gate structure is made such that the pins placed on the respective part. The gate structure has a sidewall is above the channels in the pins. Stress-induced side wall spacers are formed around the sidewalls of the gate structure and side walls of the fins. The stress-induced side wall spacers induces stress in the channel. Wherein said fins to form source and drain regions in the stress-induced using the sidewall spacers and the gate structure as a mask pins are implanted in the first ion-conductive crystals are injected