FABRICATION METHOD OF LIGHT EMITTING DEVICE HAVING SCATTERING CENTER USING ANODIC ALUMINUM OXIDE AND LIGHT EMITTING DEVICE THEREBY

摘要

the present invention includes a first conductive type semiconductor layer, the second conductivity type semiconductor layer between the active layer and that the A method for manufacturing a light emitting device made by forming on a substrate, the first conductive type semiconductor layer on the substrate and the growth of the primary phase, comprising the steps of: forming an aluminum layer on the first conductive semiconductor layer, an anodizing carried out by forming a plurality of holes formed in the aluminum layer, etching and patterning such that a portion of the first conductive type semiconductor layer by etching the plurality of holes are formed in the aluminum layer to the shadow mask, the first conductive type removing the aluminum layer remaining on the semiconductor layer, the first conductive type semiconductor layer and the second growth step of the active layer and forming a second conductive type semiconductor layer on the first conductive semiconductor layer provides a light emitting device manufacturing method comprising. ; According to the present invention, the light generated by the active layer in the light emitting element a first conductive type first conductive type semiconductor layer and a refractive index of the air layer in the semiconductor layer other because it is scattered by the scattering center can be made to efficiently released to the outside, thereby improving the light efficiency.